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Ouvrages Année : 2003

Determination of oxide charge repartition in memory tunnel oxide under stress from Fowler-Nordheim current measurements

Résumé

A method is proposed to determine the origin and the spatial oxide fixed charge repartition in memory tunnel oxide from Fowler–Nordheim current measurements after electrical stress. The Poisson equation resolution in the dielectric layer is required to account for the nonsymmetric tunneling barrier deformation, resulting from charges generated within the dielectric layer. From current–voltage characteristics measurements and simulations, we have determined the spatial distribution of the oxide fixed charges within the dielectric layer of metal/SiO2/metal structures. In addition, the kinetics of the oxide charge generation can be explained by a dispersive hydrogen transport model.
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Dates et versions

hal-01633150 , version 1 (11-11-2017)

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Citer

S. Bernardini, P. Masson, M. Houssa, F. Lalande. Determination of oxide charge repartition in memory tunnel oxide under stress from Fowler-Nordheim current measurements. pp.589-592, 2003, Essderc 2003: Proceedings of the 33rd European Solid-State Device Research Conference, 0-7803-7999-3. ⟨10.1109/essderc.2003.1256945⟩. ⟨hal-01633150⟩
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