Characterization of GaP/Si heterojunctions by space charge capacitance measurements - Archive ouverte HAL
Conference Papers Year : 2017

Characterization of GaP/Si heterojunctions by space charge capacitance measurements

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Materials Science [cond-mat.mtrl-sci] Micro and nanotechnologies/Microelectronics Electric power Optics / Photonic Materials

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https://centralesupelec.hal.science/hal-01632942

Submitted on : Friday, November 10, 2017-5:46:40 PM

Last modification on : Friday, March 24, 2023-2:53:05 PM

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hal-01632942 , version 1 (10-11-2017)

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  • HAL Id : hal-01632942 , version 1

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Artem I. Baranov, Alexander S. Gudovskikh, I.A. Morozov, A. Mozharov, Ekaterina V. Nikitina, et al.. Characterization of GaP/Si heterojunctions by space charge capacitance measurements. E-MRS 2017 Spring Meeting, May 2017, Strasbourg, France. ⟨hal-01632942⟩

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