Thermoelectric La-doped SrTiO 3 epitaxial layers with single-crystal quality: from nano to micrometers
Abstract
High-quality thermoelectric La 0.2 Sr 0.8 TiO 3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO 3 (001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10 −4 Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO 3 singlecrystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately-60 μV/K have been recorded for all films. These LSTO films can be integrated on Si for nonvolatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements.
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Electronics
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