Electrical Characterization of PiN Diodes with p+ Layer Selectively Grown by VLS Transport
Résumé
This paper deals with electrical characterization of PiN diodes fabricated on an 8° off-axis 4H-SiC with a p++ localized epitaxial area grown by Vapour-Liquid-Solid (VLS) transport. It provides for the first time evidence that a high quality p-n junction can be achieved by using this technique followed by a High Temperature Annealing (HTA) process.