Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μ m - Archive ouverte HAL
Article Dans Une Revue Applied Physics Letters Année : 2015

Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μ m

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Electronique
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hal-01626270 , version 1 (30-10-2017)

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Kamel Merghem, R. Teissier, G. Aubin, A. Monakhov, A. Ramdane, et al.. Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μ m. Applied Physics Letters, 2015, 107 (11), ⟨10.1063/1.4931364⟩. ⟨hal-01626270⟩
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