Multi-MGy Total Ionizing Dose Induced MOSFET Variability Effects on Radiation Hardened CMOS Image Sensor Performances - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2017

Multi-MGy Total Ionizing Dose Induced MOSFET Variability Effects on Radiation Hardened CMOS Image Sensor Performances

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hal-01621077 , version 1 (22-10-2017)

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  • HAL Id : hal-01621077 , version 1

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Serena Rizzolo, Vincent Goiffon, Marius Sergent, F. Corbiere, Sébastien Rolando, et al.. Multi-MGy Total Ionizing Dose Induced MOSFET Variability Effects on Radiation Hardened CMOS Image Sensor Performances. RADECS 2017 : Radiation and Its Effects on Components and Systems, Oct 2017, Genève, Switzerland. ⟨hal-01621077⟩
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