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Communication Dans Un Congrès Année : 2010

Cluster Generation Under Pulsed Laser Ablation Of Compound Semiconductors

Résumé

A comparative experimental study of pulsed laser ablation in vacuum of two binary semiconductors, zinc oxide and indium phosphide, has been performed using IR-and visible laser pulses with particular attention to cluster generation. Neutral and cationic Zn_n O_m and In_n P_m particles of various stoichiometry have been produced and investigated by time-of-flight mass spectrometry. At ZnO ablation, large cationic (n>9) and all neutral clusters are mainly stoichiometric in the ablation plume. In contrast, indium phosphide clusters are strongly indium-rich with In_4 P being a magic cluster. Analysis of the plume composition upon laser exposure has revealed congruent vaporization of ZnO and a disproportionate loss of phosphorus by the irradiated InP surface. Plume expansion conditions under ZnO ablation are shown to be favourable for stoichiometric cluster formation. A delayed vaporization of phosphorus under InP ablation has been observed that results in generation of off-stoichiometric clusters.
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hal-01620401 , version 1 (20-10-2017)

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Alexander V. Bulgakov, Anton B Evtushenko, Yuri G Shukhov, Igor Ozerov, Wladimir Marine. Cluster Generation Under Pulsed Laser Ablation Of Compound Semiconductors. International Symposium on High Power Laser Ablation, 2010, Santa Fe, United States. pp.78-89, ⟨10.1063/1.3507174⟩. ⟨hal-01620401⟩
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