Class-J Power Amplifier for 5G Applications in 28nm CMOS FD-SOI Technology
Résumé
In this work, we present the design of a fully integrated wideband high efficiency power amplifier for 5G applications. The amplifier consists of two single ended common source stages, with a class-J power stage in the 28nm CMOS FD-SOI technology. Post-layout simulation results show a broadband behavior of the amplifier over 12 GHz of bandwidth with a saturated power of 16.2 dBm and a peak power added efficiency of 39 % at 28 GHz.