Polarization insensitive Ge-rich silicon germanium waveguides for optical interconnects on silicon - Archive ouverte HAL Access content directly
Conference Papers Year : 2017

Polarization insensitive Ge-rich silicon germanium waveguides for optical interconnects on silicon

Abstract

We propose germanium-rich silicon germanium waveguides as a basic building block for polarization insensitive circuitry on silicon. In this work a detailed study of SiGe waveguides geometries is performed to find optimal parameters to simultaneously obtain low polarization sensitivity and single mode operation at λ=1.55µm. The polarization dependence of the effective index, group index and dispersion coefficient is investigated. Optimized geometries are tolerant to fabrication errors and can be realized with the current state of the art CMOS technology. As a next step polarization insensitive multimode interference structures have been designed.
Fichier principal
Vignette du fichier
proceedings_prague_2017_VV_final.pdf (834.02 Ko) Télécharger le fichier
Origin : Files produced by the author(s)
Loading...

Dates and versions

hal-01617222 , version 1 (16-10-2017)

Identifiers

  • HAL Id : hal-01617222 , version 1

Cite

V Vakarin, Papichaya Chaisakul, Jacopo Frigerio, Andrea Ballabio, Joan Manel Ramírez, et al.. Polarization insensitive Ge-rich silicon germanium waveguides for optical interconnects on silicon. SPIE optics + Optoelectronics, Apr 2017, Pragues, Czech Republic. ⟨hal-01617222⟩
188 View
131 Download

Share

Gmail Facebook X LinkedIn More