Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high-kappa/SiO2 gate stacks - Archive ouverte HAL
Journal Articles Applied Physics Letters Year : 2015

Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high-kappa/SiO2 gate stacks

Abstract

We investigate remote surface roughness (RSR) scattering by the SiO2/HfO2 interface in Fully Depleted Silicon-on-Insulator devices using Non-Equilibrium Green's Functions. We show that the RSR mobility is controlled by cross-correlations between the surface roughness profiles at the Si/SiO2 and SiO2/HfO2 interfaces. Therefore, surface roughness and remote surface roughness cannot be modeled as two independent mechanisms. RSR tends to enhance the total mobility when the Si/SiO2 interface and SiO2 thickness profiles are correlated, and to decrease the total mobility when they are anti-correlated. We discuss the implications for the high-j/Metal gate technologies. (C) 2015 AIP Publishing LLC.

Dates and versions

hal-01616548 , version 1 (13-10-2017)

Identifiers

Cite

Yann Michel Niquet, Ivan Duchemin, V. H. Nguyen, François Triozon, Denis Rideau. Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high-kappa/SiO2 gate stacks. Applied Physics Letters, 2015, 106 (2), pp.023508. ⟨10.1063/1.4906199⟩. ⟨hal-01616548⟩
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