Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 μm and Including a Tunnel Junction - Archive ouverte HAL Access content directly
Journal Articles IEEE Journal of Selected Topics in Quantum Electronics Year : 2008

Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 μm and Including a Tunnel Junction

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hal-01616283 , version 1 (13-10-2017)

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Arnaud Ducanchez, Laurent Cerutti, Alban Gassenq, Pierre Grech, Frédéric Genty. Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 μm and Including a Tunnel Junction. IEEE Journal of Selected Topics in Quantum Electronics, 2008, 14 (4), pp.1014 - 1021. ⟨10.1109/JSTQE.2008.922014⟩. ⟨hal-01616283⟩
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