Optical properties of single wurtzite/zinc-blende ZnSe nanowires grown at low temperature - Archive ouverte HAL Access content directly
Journal Articles Journal of Applied Physics Year : 2015

Optical properties of single wurtzite/zinc-blende ZnSe nanowires grown at low temperature

Abstract

ZnSe nanowires with a dominant wurtzite structure have been grown at low temperature (300 degrees C) by molecular beam epitaxy assisted by solid Au nanoparticles. The nanowires emission is polarized perpendicularly to their axis in agreement with the wurtzite selection rules. Alternations of wurtzite and zinc-blende regions have been observed by transmission electron microscopy, and their impact on the nanowires optical properties has been studied by microphotoluminescence. The nanowires show a dominant intense near-band-edge emission as well as the ZnSe wurtzite free exciton line. A type II band alignment between zinc-blende and wurtzite ZnSe is evidenced by time-resolved photoluminescence. From this measurement, we deduce values for the conduction and valence band offsets of 98 and 50 meV, respectively. (C) 2015 AIP Publishing LLC.
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Dates and versions

hal-01616164 , version 1 (13-10-2017)

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V. Zannier, Thibault Cremel, Alberto Artioli, David Ferrand, Kuntheak Kheng, et al.. Optical properties of single wurtzite/zinc-blende ZnSe nanowires grown at low temperature. Journal of Applied Physics, 2015, 118 (9), pp.095702. ⟨10.1063/1.4929821⟩. ⟨hal-01616164⟩
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