Spectroscopic Analysis of Eu3+ Implanted and Annealed GaN Layers and Nanowires
Abstract
A detailed spectroscopic analysig Of Eu3+ implanted and annealed, GaN nanowires (NWs) and layers is presented by using temperature-dependent steady-state photoluminescence, room temperature photoluminescence excitation, and,tirne-reSolved photoluminescence. Independently of the used implantation-angle and ion fluence, all the studied postimplant annealed, sarriples evidence rd D-5(0) > F-7(J), luminescence:transitions of the Eu3+ (4f(6)) ions. One dominant Err(3+) optical center was found for both GaN NVVs and layers, together with the presence of different:overlapped Eu3+ minority Optical, centers. The thermal stability of the intra-46 lines Was found to be higher for the NI/Vs Where, the red emission is observed -with the naked eye even- at room temperature,. Betides the lanthanide emission, the photoluminescence speCtfa of the NWs iand layers exhibit a broad, yellow luminescence band (YL),differing slightly in the Spectral shape and peak position in the different samples. While the YL in the layers is commonly ascribed to a free to bound (e-A) or donor acceptor pair (DAP) transitions, the recombination kinetics ofthe YL in the NVVs supports a model for a surface-mediated recombination process.