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Journal Articles Nano Letters Year : 2015

Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures


In this Letter we report on the exploration of axial metal/semiconductor (Al/Ge) nanowire heterostructures with abrupt interfaces. The formation process is enabled by a thermal induced exchange reaction between the vapor-liquid-solid grown Ge nanowire and Al contact pads due to the substantially different diffusion behavior of Ge in Al and vice versa. Temperature-dependent I-V measurements revealed the metallic properties of the crystalline Al nanowire segments with a maximum current carrying capacity of about 0.8 MA/cm(2). Transmission electron microscopy (TEM) characterization has confirmed both the composition and crystalline nature of the pure Al nanowire segments. A very sharp interface between the (111) oriented Ge nanowire and the reacted Al part was observed with a Schottky barrier height of 361 meV. To demonstrate the potential of this approach, a monolithic Al/Ge/Al heterostructure Was used to fabricate a novel impact ionization device.

Dates and versions

hal-01615211 , version 1 (12-10-2017)



S. Kral, C. Zeiner, M. Stoeger-Pollach, E. Bertagnolli, Martien den Hertog, et al.. Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures. Nano Letters, 2015, 15 (7), pp.4783-4787. ⟨10.1021/acs.nanolett.5b01748⟩. ⟨hal-01615211⟩
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