Toward moiré engineering in 2D materials via dislocation theory - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Materials Today Année : 2017

Toward moiré engineering in 2D materials via dislocation theory

Résumé

We present a framework that explains the strong connection in 2D materials between mechanics and electronic structure, via dislocation theory. Within this framework, Moir\'e patterns created by layered 2D materials may be understood as dislocation arrays, and vice versa. The dislocations are of a unique type that we describe as van der Waals dislocations, for which we present a complete geometrical description, connected to both stretch and twist Moir\'e patterns. A simple computational scheme, which reduces the complexity of the electronic interaction between layers in order to make the problem computationally tractable, is introduced to simulate these dislocation arrays, allowing us to predict and explain all of the observed Moir\'e patterns in 2D material systems within a unique framework. We extend this analysis as well to defects in Moir\'e patterns, which have been reported recently, and which are the result of defects of the same symmetry in the constituent 2D material layers. Finally, we show that linear defects in the Moir\'e space can be viewed as unidimensional topological states, and can be engineered using our framework

Dates et versions

hal-01608960 , version 1 (03-10-2017)

Identifiants

Citer

Pascal Pochet, Brian Mcguigan, Johann Coraux, Harley T. Johnson. Toward moiré engineering in 2D materials via dislocation theory. Applied Materials Today, 2017, 9, pp.240 - 250. ⟨10.1016/j.apmt.2017.07.007⟩. ⟨hal-01608960⟩
142 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More