LEAD-FREE BNT PIEZOELECTRIC THIN FILMS BY SOL-GEL METHOD - Archive ouverte HAL
Communication Dans Un Congrès Année : 2015

LEAD-FREE BNT PIEZOELECTRIC THIN FILMS BY SOL-GEL METHOD

Résumé

The objective of this work is to synthesize lead-free piezoelectric thin films by the Sol-Gel method: bismuth sodium titanate (Bi0.5Na0.5TiO3 or BNT). BNT films were annealed with the rapid thermal process (RTP). The film treated at 700°C is dense and well crystallized in the perovskite phase. The first results of electrical characterizations showed promising dielectric, ferroelectric and piezoelectric performance. At 12 kHz, the dielectric constant and losses are 430 and 0.07, respectively. Ferroelectric hysteresis measurements indicated a remanent polarization of 10μC/cm 2 , associated with a coercive field of 70 kV/cm. The piezoelectric properties of BNT films were studied with a laser Doppler interferometer: a piezoelectric coefficient (d33effmax) of 42 pm/V was measured.
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Dates et versions

hal-01598140 , version 1 (29-09-2017)

Identifiants

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Sara Abou Dargham, Freddy Ponchel, M. Soueidan, Antonio Khoury, Jamal Assaad, et al.. LEAD-FREE BNT PIEZOELECTRIC THIN FILMS BY SOL-GEL METHOD. ISPDS1, Dec 2015, Amiens, France. ⟨10.23647/ca.md20161217⟩. ⟨hal-01598140⟩
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