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Journal Articles Nano Letters Year : 2015

Tensile Strained Germanium Nanowires Measured by Photocurrent Spectroscopy and X-ray Microdiffraction

Abstract

Applying tensile strain in a single germanium crystal is a very promising way to tune its bandstructure and turn it into a direct band gap semiconductor. In this work, we stress vapor-liquid-solid grown germanium nanowires along their [111] axis thanks to the strain tranfer from a silicon nitride thin film by a microfabrication process. We measure the Gamma-LH direct band gap transition by photocurrent spectrometry and quantify associated strain by X-ray Laue microdiffraction on beamline BM32 at the European Synchrotron Radiation Facility. Nanowires exhibit up to 1.48% strain and an absorption threshold down to 0.73 eV, which is in good agreement with theoretical computations for the Gamma-LH transition, showing that the nanowire geometry is an efficient way of applying tensile uniaxial stress along the [111] axis of a germanium crystal.
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Dates and versions

hal-01593538 , version 1 (26-09-2017)

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Kevin Guilloy, Nicolas Pauc, Alban Gassenq, Pascal Gentile, Samuel Tardif, et al.. Tensile Strained Germanium Nanowires Measured by Photocurrent Spectroscopy and X-ray Microdiffraction. Nano Letters, 2015, 15 (4), pp.2429-2433. ⟨10.1021/nl5048219⟩. ⟨hal-01593538⟩
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