Radial photovoltaic junction with single Si nanowire core-shell structure
Résumé
A single silicon nanowire core-shell structure has been elaborated. Technological stages of the process are presented. The device results in a P-i-N radial junction: the core is a P-type silicon nanowire encapsulated in an intrinsic thin silicon layer and an N-type doped silicon layer. Scanning electron microscopy observations, as well as the electrical I(V) characterisation on single nanowires, are presented.
Mots clés
Elemental Semiconductors
Semiconductor Junctions
Core-Shell Nanostructures
Scanning Electron Microscopy
Solar Cells
Radial Photovoltaic Junction
Single Silicon Nanowire Core-Shell
P-i-N radial junction
P-type silicon nanowire
Thin silicon layer
N-type doped silicon layer
Electrical Characterisation
Silicon Nanowires