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Journal Articles Nano Letters Year : 2015

Dispersively Detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor

Abstract

We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation of the quantum dot system down to the few-electron limit. We measure the charge stability of the double quantum dot in DC transport as well as dispersively via in situ gate-based radio frequency reflectometry, where one top-gate electrode is connected to a resonator. The latter removes the need for external charge sensors in quantum computing architectures and provides a compact way to readout the dispersive shift caused by changes in the quantum capacitance during inter-dot charge transitions. Here, we observe Pauli spin-blockade in the high-frequency response of the circuit at finite magnetic fields between singlet and triplet states. The blockade is lifted at higher magnetic fields when intra-dot triplet states become the ground state configuration. A line shape analysis of the dispersive phase shift reveals furthermore an intra-dot valley-orbit splitting Delta(v0) of 145 mu eV. Our results open up the possibility to operate compact complementary metal-oxide semiconductor (CMOS) technology as a singlet-triplet qubit and make split-gate silicon nanowire architectures an ideal candidate for the study of spin dynamics.

Dates and versions

hal-01587150 , version 1 (13-09-2017)

Identifiers

Cite

A. C. Betz, Romain Wacquez, Maud Vinet, Xavier Jehl, A. L. Saraiva, et al.. Dispersively Detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor. Nano Letters, 2015, 15 (7), pp.4622-4627. ⟨10.1021/acs.nanolett.5b01306⟩. ⟨hal-01587150⟩
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