Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2015

Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries

Abstract

Using correlated experiments on single nanowires (NWs) by microphotoluminescence (mu-PL) and high resolution scanning transmission electron microscopy, we attribute the 3.45 eV luminescence of GaN NWs grown by plasma assisted molecular beam epitaxy (PA-MBE) to the presence of prismatic inversion domain boundaries (pIDBs). This attribution is further strengthened by a recent publication demonstrating the observation of pIDBs in PA-MBE grown GaN NWs. A statistical study of the presence of 3.45 eV lines in NWs PL spectra allows to estimate the ratio of single NWs nucleating with a pIDB to be 50% in the sample under scrutiny. (C) 2015 AIP Publishing LLC.
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Dates and versions

hal-01586122 , version 1 (26-05-2021)

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Thomas Auzelle, Benedikt Haas, Martien den Hertog, Jean-Luc Rouvière, Bruno Daudin, et al.. Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries. Applied Physics Letters, 2015, 107 (5), pp.051904. ⟨10.1063/1.4927826⟩. ⟨hal-01586122⟩
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