Ferroelectric Control of Organic/Ferromagnetic Spinterface - Archive ouverte HAL
Article Dans Une Revue Advanced Materials Année : 2016

Ferroelectric Control of Organic/Ferromagnetic Spinterface

Hongxin Yang
Stéphane Mangin
Daniel Lacour
Michel Hehn
O. Copie
Karine Dumesnil
Yuan Lu

Résumé

Organic multiferroic tunnel junctions based on La0.6Sr0.4MnO3/poly(vinylidene fluoride) (PVDF)/Co structures are fabricated. The tunneling magneto-resistance sign can be changed by electrically switching the ferroelectric polarization of PVDF barrier. It is demonstrated that the spin-polarization of the PVDF/Co spinterface can be actively controlled by tuning the ferroelectric polarization of PVDF. This study opens new functionality in controlling the injection of spin polarization into organic materials via the ferroelectric polarization of the barrier.

Dates et versions

hal-01576502 , version 1 (23-08-2017)

Identifiants

Citer

Shiheng Liang, Hongxin Yang, Huaiwen Yang, Bingshan Tao, Abdelhak Djeffal, et al.. Ferroelectric Control of Organic/Ferromagnetic Spinterface. Advanced Materials, 2016, 28 (46), pp.10204 - 10210. ⟨10.1002/adma.201603638⟩. ⟨hal-01576502⟩
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