Active devices choice and design of an all cryogenic superconductor resonator oscillator
Résumé
Several silicon-germanium bipolar transistors have been measured at cryogenic temperature regarding their gain and phase noise performance. The electrical model of the chosen device has been extracted. Using this model, the phase noise performance of a cryogenic superconductor oscillator has been simulated. The results are very promising, with a phase noise level of-155 dBc/Hz at 1 kHz offset from of a 1 GHz carrier.
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