28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part II - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Circuits and Systems, Scientific Research Publishing Année : 2017

28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part II

Mohsen Ali
  • Fonction : Auteur
Harb Adnan
  • Fonction : Auteur
Serhane Abraham
  • Fonction : Auteur

Résumé

This is Part II of a two-part paper that explores the 28-nm UTBB FD-SOI CMOS and the 22-nm Tri-Gate FinFET technology as the better alternatives to bulk transistors especially when the transistor’s architecture is going fully depleted and its size is becoming much smaller, 28-nm and above. Reliability tests of those alternatives are first discussed. Then, a comparison is made between the two alternative transistors comparing their physical properties, electrical properties, and their preferences in different applications.

Domaines

Electronique

Dates et versions

hal-01567845 , version 1 (24-07-2017)

Identifiants

Citer

Mohsen Ali, Harb Adnan, Nathalie Deltimple, Serhane Abraham. 28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part II. Circuits and Systems, Scientific Research Publishing, 2017, 8 (5), pp.111-121. ⟨10.4236/cs.2017.85007⟩. ⟨hal-01567845⟩
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