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Article Dans Une Revue Circuits and Systems, Scientific Research Publishing Année : 2017

28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part I

Mohsen Ali
  • Fonction : Auteur
Harb Adnan
  • Fonction : Auteur
Serhane Abraham
  • Fonction : Auteur

Résumé

Nowadays, transistor technology is going toward the fully depleted architecture; the bulk transistors are becoming more complex in manufacturing as the transistor size is becoming smaller to achieve the high performance especially at the node 28 nm. This is the first of two papers that discuss the basic drawbacks of the bulk transistors and explain the two alternative transistors: 28 nm UTBB FD-SOI CMOS and the 22 nm Tri-Gate FinFET. The accompanying paper, Part II, focuses on the comparison between those alternatives and their physical properties, electrical properties, and reliability tests to properly set the preferences when choosing for different mobile media and consumers’ applications.

Domaines

Electronique

Dates et versions

hal-01567840 , version 1 (24-07-2017)

Identifiants

Citer

Mohsen Ali, Harb Adnan, Nathalie Deltimple, Serhane Abraham. 28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part I. Circuits and Systems, Scientific Research Publishing, 2017, Circuits and Systems, 8, pp.93-110. ⟨10.4236/cs.2017.84006⟩. ⟨hal-01567840⟩
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