Determination of the cationic distribution in oxidic thin films by resonant X-ray diffraction: the magnetoelectric compound Ga2-xFexO3. Supporting information - Archive ouverte HAL
Article Dans Une Revue Journal of Applied Crystallography Année : 2016

Determination of the cationic distribution in oxidic thin films by resonant X-ray diffraction: the magnetoelectric compound Ga2-xFexO3. Supporting information

Résumé

The cationic distribution is decisive for both the magnetic and electric properties of complex oxides. While it can be easily determined in bulk materials using classical methods such as X-ray or neutron diffraction, difficulties arise for thin films owing to the relatively small amount of material to probe. It is shown here that a full determination of the cationic site distribution in thin films is possible through an optimized processing of resonant elastic X-ray scattering experiments. The method is illustrated using gallium ferrite Ga 2-x Fe x O 3 samples which have been the focus of an increasing number of studies this past decade. They indeed represent an alternative to the, to date, only room-temperature magnetoelectric compound BiFeO 3. The methodology can be applied to determine the element distribution over the various crystallographic sites in any crystallized system.

Dates et versions

hal-01566607 , version 1 (21-07-2017)

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Christophe Lefevre, Alexandre Thomasson, Francois Roulland, Vincent Favre-Nicolin, Yves Joly, et al.. Determination of the cationic distribution in oxidic thin films by resonant X-ray diffraction: the magnetoelectric compound Ga2-xFexO3. Supporting information. Journal of Applied Crystallography, 2016, 49 (4), pp.1308-1314. ⟨10.1107/S1600576716010001/to5141sup1.pdf⟩. ⟨hal-01566607⟩
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