High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates - Archive ouverte HAL Access content directly
Journal Articles physica status solidi (a) Year : 2017

High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates

R. Dagher
  • Function : Author
S. Matta
  • Function : Author
Romain Parret
Matthieu Paillet
Benoit Jouault
L. Nguyen
  • Function : Author
M. Portail
M. Zielinski
  • Function : Author
T. Chassagne
  • Function : Author
J. Brault
  • Function : Author
Y. Cordier
A. Michon

Abstract

Graphene and AlN are promising materials, interesting to combine together. In this study, we will present first results for direct growth of graphene on bulk AlN and on AlN templates using chemical vapor deposition, including the annealing of these substrates at high temperatures. Atomic force microscopy (AFM) enabled us to study the evolution of the AlN surface morphology after annealing and growth. Few-layer graphene deposition is demonstrated on the basis of X-ray photoemission and Raman spectroscopy
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hal-01563258 , version 1 (17-07-2017)

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R. Dagher, S. Matta, Romain Parret, Matthieu Paillet, Benoit Jouault, et al.. High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates. physica status solidi (a), 2017, 214 (4), pp.1600436. ⟨10.1002/pssa.201600436⟩. ⟨hal-01563258⟩
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