TCAD Simulation of the Single Event Effects in Normally-off GaN Transistors after Heavy Ion Radiation
Résumé
Electrical behavior of COTS normally-off GaN power transistors under heavy ion radiation is presented based on TCAD numerical simulation for the first time in order to better understand the mechanism of Single Event Effects (SEE) in these devices. Firstly, the worst case has been defined from the Single Event Transient mechanism. Then, the decrease in the electric field observed after radiation and the traps effect have been addressed. Finally, possible mechanisms of SEE in these devices under heavy ion are proposed.
Domaines
Electronique
Fichier principal
Revised Abstract_2_ZERARKA_IEEE-TNS_special issue radecs16.pdf (2.35 Mo)
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| Origine | Fichiers produits par l'(les) auteur(s) |
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