Dislocation-free axial InAs-on-GaAs nanowires on silicon - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Nanotechnology Année : 2017

Dislocation-free axial InAs-on-GaAs nanowires on silicon

D. V. Beznasyuk
  • Fonction : Auteur
  • PersonId : 1069074
Martien den Hertog
Julien Claudon
Moïra Hocevar

Résumé

We report on the growth of axial InAs-on-GaAs nanowire heterostructures on silicon by molecular beam epitaxy using 20 nm diameter Au catalysts. First, the growth parameters of the GaAs nanowire segment were optimized to achieve a pure wurtzite crystal structure. Then, we developed a two-step growth procedure to enhance the yield of vertical InAs-on-GaAs nanowires. We achieved 90% of straight InAs-on-GaAs nanowires by further optimizing the growth parameters. We investigated the composition change at the interface by energy dispersive X-ray spectroscopy and the nanowire crystal structure by transmission electron microscopy. The nominal composition of the InAs segment is found to be InxGa1-xAs with x=0.85 and corresponds to 6% of lattice mismatch with GaAs. Strain mapping performed by the geometrical phase analysis of high-resolution images revealed a dislocation-free GaAs/In0.85Ga0.15As interface. In conclusion, we successfully fabricated highly mismatched heterostructures, confirming the prediction that axial GaAs/In0.85Ga0.15As interfaces are pseudomorphic in nanowires below 40 nm diameter.
Fichier principal
Vignette du fichier
1704.05631.pdf (4.76 Mo) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-01555564 , version 1 (25-05-2022)

Identifiants

Citer

D. V. Beznasyuk, Eric Robin, Martien den Hertog, Julien Claudon, Moïra Hocevar. Dislocation-free axial InAs-on-GaAs nanowires on silicon. Nanotechnology, 2017, 28 (36), pp.365602. ⟨10.1088/1361-6528/aa7d40⟩. ⟨hal-01555564⟩
187 Consultations
24 Téléchargements

Altmetric

Partager

Gmail Mastodon Facebook X LinkedIn More