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Article Dans Une Revue IEEE Journal of Solid-State Circuits Année : 2001

Thermal coupling in integrated circuits: Application to thermal testing

Résumé

The power dissipated by the devices of a circuit can be construed as a signature of the circuit's performance and state. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements of the silicon die surface via built-in differential temperature sensors. In this paper, dynamic and spatial thermal behavioral characterization of VLSI MOS devices is presented using laser thermoreflectance measurements and on-chip differential temperature sensing circuits. A discussion of the application of built-in differential temperature measurements as an IC test strategy is also presented.
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Dates et versions

hal-01550679 , version 1 (29-06-2017)

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J. Altet, A. Rubio, Emmanuel Schaub, S. Dilhaire, W. Claeys. Thermal coupling in integrated circuits: Application to thermal testing. IEEE Journal of Solid-State Circuits, 2001, 36 (1), pp.81-91. ⟨10.1109/4.896232⟩. ⟨hal-01550679⟩

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