Through the use of particle-in-cell simulations, we demonstrate that the power deposition in capacitively coupled discharges (in argon) can be increased by replacing sinusoidal waveforms with Gaussian-shaped voltage pulses (with a repetition frequency of 13.56 MHz). By changing the Gaussian pulse width, electron heating can be directly controlled, allowing for an increased plasma density and ion flux for the same gas pressure and geometrical operating conditions. Analysis of the power deposition profiles and electron distribution functions shows that enhanced electron-sheath heating is responsible for the increased power absorption.