The convergence of nonlinear optical devices and silicon photonics is a key milestone for the practical development of photonic integrated circuits. The associated technological issues often stem from material incompatibility. This is the case of second order nonlinear processes in monolithically integrated III-V semiconductor devices on silicon, where structural defects called antiphase domains strongly impact the optical properties of the material. We theoretically investigate the influence of antiphase domains on second harmonic generation in III-V whispering gallery mode microresonators on silicon and focus on the effects of the antiphase domains’ mean size (i.e. the correlation length of the distribution). We demonstrate that the domain distributions can have opposite effects depending on the nonlinear process under consideration: while antiphase domains negatively impact second harmonic generation under ¯4 quasi-phase matching conditions (independent of the correlation length), large conversion efficiencies can arise far from ¯4-quasi-phase matching provided that the APD correlation length remains within an appropriate range, and is still compatible with the spontaneous emergence of such defects in the usual III-V on Si epilayers. Such a build-up can be explained by the occurrence of random quasi-phase matching in the system.