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Communication Dans Un Congrès Année : 2016

Simulation of Single Particle Displacement Damage in Silicon – Part I: Global Approach and Primary Interaction Simulation

Résumé

A comprehensive approach is developed for the simulation of single particle displacement damage in silicon. The first step corresponding to Monte Carlo simulation of the primary interaction is presented.
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Dates et versions

hal-01528225 , version 1 (28-05-2017)

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  • HAL Id : hal-01528225 , version 1

Citer

Melanie Raine, Nicolas Richard, Antoine Jay, Vincent Goiffon, Sylvain Girard, et al.. Simulation of Single Particle Displacement Damage in Silicon – Part I: Global Approach and Primary Interaction Simulation. 2016 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2016), Jul 2016, Portland, United States. ⟨hal-01528225⟩
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