Scanning tunneling microscopy investigation of GaP epitaxial growth on nominal and vicinal Si(001) substrates for optoelectronic applications - Archive ouverte HAL
Poster De Conférence Année : 2016

Scanning tunneling microscopy investigation of GaP epitaxial growth on nominal and vicinal Si(001) substrates for optoelectronic applications

Domaines

Science des matériaux [cond-mat.mtrl-sci] Matériaux

Charles Cornet  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-01497071

Soumis le : mardi 28 mars 2017-11:42:23

Dernière modification le : lundi 16 septembre 2024-17:52:04

Fichier non déposé

Dates et versions

hal-01497071 , version 1 (28-03-2017)

Identifiants

  • HAL Id : hal-01497071 , version 1

Citer

Simon Charbonnier, Ida Lucci, S. Gangopadhyay, Yanping Wang, Tony Rohel, et al.. Scanning tunneling microscopy investigation of GaP epitaxial growth on nominal and vicinal Si(001) substrates for optoelectronic applications. European Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France. ⟨hal-01497071⟩

Exporter

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

UNIV-RENNES1 CNRS INSA-RENNES FOTON FOTON-INSA OSUR IPR FOTON_OHM IPR-MN UR1-UFR-SPM UR1-MATH-STIC UNIV-RENNES INSA-GROUPE ANR UR1-MATH-NUM UR1-MMS
176 Consultations
0 Téléchargements

Partager

More