Scanning tunneling microscopy investigation of GaP epitaxial growth on nominal and vicinal Si(001) substrates for optoelectronic applications - Archive ouverte HAL
Poster De Conférence Année : 2016

Scanning tunneling microscopy investigation of GaP epitaxial growth on nominal and vicinal Si(001) substrates for optoelectronic applications

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Science des matériaux [cond-mat.mtrl-sci] Matériaux

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https://hal.science/hal-01497071

Soumis le : mardi 28 mars 2017-11:42:23

Dernière modification le : lundi 16 septembre 2024-17:52:04

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hal-01497071 , version 1 (28-03-2017)

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  • HAL Id : hal-01497071 , version 1

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Simon Charbonnier, Ida Lucci, S. Gangopadhyay, Yanping Wang, Tony Rohel, et al.. Scanning tunneling microscopy investigation of GaP epitaxial growth on nominal and vicinal Si(001) substrates for optoelectronic applications. European Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France. ⟨hal-01497071⟩

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