GaAsPN Absorbers Grown on GaP for Multijunction Solar Cells: Optical Absorption and Thermal Conductivity Properties - Archive ouverte HAL Accéder directement au contenu
Poster De Conférence Année : 2016

GaAsPN Absorbers Grown on GaP for Multijunction Solar Cells: Optical Absorption and Thermal Conductivity Properties

Soufiene Ilahi
  • Fonction : Auteur
N. Yacoubi
  • Fonction : Auteur
R Kudrawiec
  • Fonction : Auteur

Résumé

Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP are investigated by optical absorption spectroscopy and photo‐thermal deflection spectroscopy (PDS). First, the strong dependence of optical absorption on As content is shown: with a maximum absorption coefficient of 38,000 cm‐1 below the GaP bandgap. Optical absorption and thermal conductivity of the samples are then evaluated for various growth and annealing conditions using PDS. The significantly positive impact of annealing on both properties is demonstrated. Thermal conductivity reached 4W/mK for the best sample. These results are promising for the development of absorbers in multijunction solar cells.

Domaines

Matériaux
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Dates et versions

hal-01496917 , version 1 (28-03-2017)

Identifiants

  • HAL Id : hal-01496917 , version 1

Citer

Mickael da Silva, Soufiene Ilahi, Samy Almosni, Fares Chouchane, Mathieu Perrin, et al.. GaAsPN Absorbers Grown on GaP for Multijunction Solar Cells: Optical Absorption and Thermal Conductivity Properties. 19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France. 2016. ⟨hal-01496917⟩
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