Optical Simulation of Multijunction Solar Cells Based on III-V Nanowires on Silicon
Résumé
Arrays of III-V direct-bandgap semiconductor nanowires are promising candidates for future photovoltaic devices due to their high optical absorption and their ability to be grown on low cost semiconductor substrates like silicon. The core-shell structure is particularly interesting as the electron-hole pair separation occurs in the radial direction and the photogenerated minority carriers have to travel short distances (the radius of the nanowires) thus improving the collection probability in case of well passivated nanowire surfaces.