Modeling the anisotropic electro-optic interaction in hybrid silicon-ferroelectric optical modulator - Archive ouverte HAL
Article Dans Une Revue Optics Express Année : 2015

Modeling the anisotropic electro-optic interaction in hybrid silicon-ferroelectric optical modulator

Résumé

We present a numerical method to accurately model the electrooptic interaction in anisotropic materials. Specifically, we combine a fullvectorial finite-difference optical mode solver with a radio-frequency solver to analyze the overlap between optical modes and applied electric field. This technique enables a comprehensive understanding on how electrooptic effects modify individual elements in the permittivity tensor of a material. We demonstrate the interest of this approach by designing a modulator that leverages the Pockels effect in a hybrid silicon-BaTiO3 slot waveguide. Optimized optical confinement in the active BaTiO3 layer as well as design of travelling-wave index-matched electrodes is presented. Most importantly, we show that the overall electro-optic modulation is largely governed by off-diagonal elements in the permittivity tensor. As most of active electro-optic materials are anisotropic, this method paves the way to better understand the physics of electro-optic effects and to improve optical modulators. (C) 2015 Optical Society of America

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hal-01489430 , version 1 (14-03-2017)

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Xuan Hu, Sébastien Cueff, Pedro Rojo-Romeo, Regis Orobtchouk. Modeling the anisotropic electro-optic interaction in hybrid silicon-ferroelectric optical modulator. Optics Express, 2015, 23 (2), pp.1699-1714. ⟨10.1364/OE.23.001699⟩. ⟨hal-01489430⟩
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