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Article Dans Une Revue Diamond and Related Materials Année : 2016

Mosaicity, dislocations and strain in heteroepitaxial diamond grown on iridium

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The present study provides a multi-scale investigation of the crystalline quality and the structural defects present in heteroepitaxial diamond films grown on iridium/SrTiO3 (001) substrates bymicrowave plasma assisted chemical vapor deposition. X-ray diffraction, Raman spectroscopy and low temperature cathodoluminescence are combined to accurately characterize the mosaicity, the density of dislocations and the residual strain within the films. X-ray diffraction and Raman results confirm a structural quality at the state-of-the-art according to the epitaxial relationship 〈100〉diamond(001) // 〈100〉iridium(001) // 〈100〉SrTiO3 (001). In addition, Raman and cathodoluminescence observations on cross-sections reveal the presence of local strain.
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hal-01489123 , version 1 (30-06-2021)

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H. Bensalah, I. Stenger, G. Sakr, J. Barjon, Romain Bachelet, et al.. Mosaicity, dislocations and strain in heteroepitaxial diamond grown on iridium. Diamond and Related Materials, 2016, 66, pp.188-195. ⟨10.1016/j.diamond.2016.04.006⟩. ⟨hal-01489123⟩
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