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Article Dans Une Revue Physical Review B Année : 2017

Direct observation of the band structure in bulk hexagonal boron nitride

Jose Avila
  • Fonction : Auteur
Guillaume Cassabois
  • Fonction : Auteur
  • PersonId : 1002524
Yannick J. Dappe
Chaoyu Chen
  • Fonction : Auteur
Bernard Gil
  • Fonction : Auteur
  • PersonId : 995090
Fausto Sirotti

Résumé

A promising route towards nanodevice applications relies on the association of graphene and transition metal dichalcogenides with hexagonal boron nitride (h-BN). Due to its insulating nature, h-BN has emerged as a natural substrate and gate dielectric for graphene-based electronic devices. However, some fundamental properties of bulk h-BN remain obscure. For example, the band structure and the position of the Fermi level have not been experimentally resolved. Here, we report a direct observation of parabolic dispersions of h-BN crystals using high-resolution angle-resolved photoemission spectroscopy (ARPES). We find that h-BN exfoliation on epitaxial graphene enables overcoming the technical difficulties of using ARPES with insulating materials. We show trigonal warping of the intensity maps at constant energy. The valence-band maxima are located around the K points, 2.5 eV below the Fermi level, thus confirming the residual p-type character of typical h-BN.
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Dates et versions

hal-01487020 , version 1 (10-03-2017)

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Hugo Henck, Debora Pierucci, Giorgia Fugallo, Jose Avila, Guillaume Cassabois, et al.. Direct observation of the band structure in bulk hexagonal boron nitride. Physical Review B, 2017, 95 (8), pp.085410. ⟨10.1103/PhysRevB.95.085410⟩. ⟨hal-01487020⟩
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