Uniform L ∞ estimates for approximate solutions of the bipolar drift-diffusion system
Résumé
We establish uniform L ∞ bounds for approximate solutions of the drift-diffusion system for electrons and holes in semiconductor devices, computed with the Schar-fetter-Gummel finite-volume scheme. The proof is based on a Moser iteration technique adapted to the discrete case.
Domaines
Analyse numérique [math.NA]Origine | Fichiers produits par l'(les) auteur(s) |
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