Current Switching Coupled to Molecular Spin-States in Large-Area Junctions
Résumé
The fabrication of large-area vertical junctions with a molecular spin-crossover complex displaying concerted changes of spin degrees of freedom and charge-transport properties is reported. Fabricated devices allow spin-state switching in the spin-crossover layer to be triggered and probed by optical means, while detecting associated changes in electrical resistance in the junctions.
Domaines
Electronique| Origine | Fichiers produits par l'(les) auteur(s) |
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