To cite this article: A I Baranov et al 2016 J. Phys.: Conf. Ser. 741 012077 View the article online for updates and enhancements. Related content DLTS of p-type Czochralski Si wafers containing processing-induced macropores E Simoen, V Depauw, I Gordon et al.-Recent citations Modeling of the tandem III-V dilute nitride bulk or quantum engineered/silicon solar cells Khim Kharel and Alex Freundlich-Band structure and absorption properties of (Ga, In)/(P, As, N) symmetric and asymmetric quantum wells and super-lattice structures: Towards lattice-matched Abstract. Defect properties of Ga(In)P(NAs) layers with different composition were studied by admittance spectroscopy. For nitrogen content layers the defect level with energy of 0.44-0.47 eV, which related to nitrogen incorporation into GaP, was observed. Its concentration is lower for GaPNAs layers compared to GaPN/InP due to better compensation by arsenic than by indium in lattice of GaP. Other defect level with energy of 0.30 eV was detected in GaPAs and GaPN/InP layers. Likely, the both observed defects in GaPAs and GaPN/InP have the same nature.