Nanocrystallized tetragonal metastable ZrO2 thin films deposited by metal-organic chemical vapor deposition for 3D capacitors - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Thin Solid Films Année : 2011

Nanocrystallized tetragonal metastable ZrO2 thin films deposited by metal-organic chemical vapor deposition for 3D capacitors

Résumé

ZrO2 is a potential candidate for the realization of 3D capacitors on silicon for future Systems-on-Chips. The paper reports the deposition of ZrO2 thin films by metal-organic chemical vapour deposition on planar and 3D structures. Physico-chemical as well as electrical properties of the films are investigated. It is shown that the change of phase and microstructure of the film due to annealing at 900°C under O2 impacts directly on the electrical performance of the capacitors. Capacitance densities are 2 nF/mm² for planar capacitors and reach 8 nF/mm² for capacitors with pores etched in silicon with 4:1 aspect ratio.
Fichier principal
Vignette du fichier
TSF-D-10-01096R2.pdf (774.42 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-01443083 , version 1 (22-01-2017)

Identifiants

Citer

Magali Brunet, Hicham Mafhoz Kotb, Laurent Bouscayrol, Emmanuel Scheid, Michel Andrieux, et al.. Nanocrystallized tetragonal metastable ZrO2 thin films deposited by metal-organic chemical vapor deposition for 3D capacitors. Thin Solid Films, 2011, 519 (16), pp.5638-5644. ⟨10.1016/j.tsf.2011.03.006⟩. ⟨hal-01443083⟩
137 Consultations
352 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More