Surface Control of Doping in Self-Doped Nanocrystals - Archive ouverte HAL
Article Dans Une Revue ACS Applied Materials & Interfaces Année : 2016

Surface Control of Doping in Self-Doped Nanocrystals

Résumé

Self-doped nanocrystals raise great interest for infrared (IR) optoelectronics because their optical properties span from near to far IR. However, their integration for photodetection requires a fine understanding of the origin of their doping and also a way to control the magnitude of the doping. In this paper, we demonstrate that a fine control of the doping level between 0.1 and 2 electrons per dot is obtained through ligand exchange. The latter affects not only the interparticle coupling but also their optical properties because of the band-shift resulting from the presence of surface dipoles. We demonstrate that self-doping is a bulk process and that surface dipoles can control its magnitude. We additionally propose a model to quantify the dipole involved with each ligand. We eventually use the ligand design rule previously evidenced to build a near-infrared photodetector on a soft and transparent substrate. The latter significantly improves the performance compared to previously reported colloidal quantum dot-based photodetectors on plastic substrates operated in the telecom wavelength range.
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Dates et versions

hal-01438644 , version 1 (02-07-2020)

Identifiants

Citer

Adrien Robin, Clément Livache, Sandrine Ithurria, Emmanuelle Lacaze, Benoit Dubertret, et al.. Surface Control of Doping in Self-Doped Nanocrystals. ACS Applied Materials & Interfaces, 2016, 8 (40), pp.27122 - 27128. ⟨10.1021/acsami.6b09530⟩. ⟨hal-01438644⟩
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