A low-loss planar goubau line and a coplanar-PGL transition on high-resistivity silicon substrate in the 57–64 GHz band
Abstract
Planar Goubau line (PGL) structures on high-resistivity silicon are adapted to the 57–64 GHz frequency band. Simulations and measurements show a lower attenuation than with the coplanar line is obtained. Very low losses are attained with a measured average attenuation of 0.064 dB/mm on the whole band. To allow this measurement, coplanar-PGL transitions have been optimized.