A low-loss planar goubau line and a coplanar-PGL transition on high-resistivity silicon substrate in the 57–64 GHz band - Archive ouverte HAL Access content directly
Journal Articles Microwave and Optical Technology Letters Year : 2012

A low-loss planar goubau line and a coplanar-PGL transition on high-resistivity silicon substrate in the 57–64 GHz band

Abstract

Planar Goubau line (PGL) structures on high-resistivity silicon are adapted to the 57–64 GHz frequency band. Simulations and measurements show a lower attenuation than with the coplanar line is obtained. Very low losses are attained with a measured average attenuation of 0.064 dB/mm on the whole band. To allow this measurement, coplanar-PGL transitions have been optimized.

Dates and versions

hal-01438497 , version 1 (17-01-2017)

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Julien Emond, Marjorie Grzeskowiak, Gaelle Bazin Lissorgues, Stephane Protat, Frédérique Deshours, et al.. A low-loss planar goubau line and a coplanar-PGL transition on high-resistivity silicon substrate in the 57–64 GHz band. Microwave and Optical Technology Letters, 2012, January 2012, 54 (1), pp.164-168 ⟨10.1002/mop.26470⟩. ⟨hal-01438497⟩
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