Edge illuminated SiGe heterojunction phototransistor for RoF applications - Archive ouverte HAL Access content directly
Journal Articles Electronics Letters Year : 2015

Edge illuminated SiGe heterojunction phototransistor for RoF applications

Abstract

The first edge illuminated SiGe phototransistor based on the available commercial SiGe/Si BiCMOS technology for low cost detector or mixer in Radio-over-Fiber applications. Its technology and structure are described. Edge mapping of the phototransistor performances, so as to observe the fastest and the highest sensitive areas of the structure, is performed. The phototransistor exhibits a cutoff frequency of 890MHz and low frequency responsivity of 0.45A/W at 850nm. This new SiGe/Si phototransistor structure provides a cutoff frequency double to the one of a top illuminated SiGe/Si phototransistor obtained using the same BiCMOS technology.
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Dates and versions

hal-01436923 , version 1 (16-01-2017)

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Z G Tegegne, C Viana, J L Polleux, M G Grzeskowiak, Elodie Richalot. Edge illuminated SiGe heterojunction phototransistor for RoF applications. Electronics Letters, 2015, 51, pp.1906 - 1908. ⟨10.1049/el.2015.2448⟩. ⟨hal-01436923⟩
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