Origin of the first-phase selection during thin film reactive diffusion: Experimental and theoretical insights into the Pd-Ge system - Archive ouverte HAL
Article Dans Une Revue Scripta Materialia Année : 2016

Origin of the first-phase selection during thin film reactive diffusion: Experimental and theoretical insights into the Pd-Ge system

Résumé

Pd-Ge reactive-diffusion in two different samples Pd/Ge(001) and Pd/PdGe/Ge(001) was studied experimentally and theoretically, in order to clearly identify the driving force controlling the first-phase selection in the sequential phase formation regime. The experimental and theoretical results both show that only the atomic transport kinetic in the phases controls the first -phase selection: the phase exhibiting the fastest atomic self-diffusion forms first, even if its formation energy is not the lowest. (C) 2016 Elsevier Ltd. All rights reserved.
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Dates et versions

hal-01435282 , version 1 (13-01-2017)

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J. Perrin Toinin, K. Hoummada, M. Bertoglio, A. Portavoce. Origin of the first-phase selection during thin film reactive diffusion: Experimental and theoretical insights into the Pd-Ge system. Scripta Materialia, 2016, 122, pp.22-25. ⟨10.1016/j.scriptamat.2016.05.008⟩. ⟨hal-01435282⟩
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