Self-catalyzed growth of GaAs nanowires on silicon by HVPE
Résumé
We report on the first self -catalyzed growth of GaAs nanowires on patterned and non -patterned silicon (111) wafers by hydride vapor phase epitaxy (HVPE) with a record elongation rate of 30 !lm/h. The crystalline structure was analyzed using high resolution transmission electron microscopy (HRTEM). Self -catalyzed growth proceeds under gallium rich conditions at low -temperature (600 C). Nanowires exhibit cylindrical rod -like shape morphology with a mean diameter of 50 nm and are randomly distributed.