Investigating the Single-Event-Transient Sensitivity of 65 nm Clock Trees with Heavy Ion Irradiation and Monte-Carlo Simulation - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2016

Investigating the Single-Event-Transient Sensitivity of 65 nm Clock Trees with Heavy Ion Irradiation and Monte-Carlo Simulation

Résumé

We present a study of single-event transients in clock tree structures in 65 nm bulk silicon technology. Shift registers are irradiated with heavy ions over a large range of linear energy transfers representative of both terrestrial and space environments. By attributing large error clusters in the flip-flop shifters to clock tree events, we derive experimental cross sections for the clock tree cells. Monte-Carlo irradiation simulations performed on the same structures are in good agreement with these data, allowing to assess the radiation robustness of other clock-tree configurations.
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Dates et versions

hal-01435110 , version 1 (13-01-2017)

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  • HAL Id : hal-01435110 , version 1

Citer

Victor Malherbe, Gilles Gasiot, Sylvain Clerc, Fady Abouzeid, Jean-Luc Autran, et al.. Investigating the Single-Event-Transient Sensitivity of 65 nm Clock Trees with Heavy Ion Irradiation and Monte-Carlo Simulation. 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016, Unknown, Unknown Region. ⟨hal-01435110⟩
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