LaLuO3 amorphous thin films were elaborated by pulsed laser deposition technique on different support: Si (100), Si(100) with buffer layer CeO2, MgO(111) and Al2O3 (1101). For obtained the crystallizes phase the thin films were annealed in temperature 1100 degrees C in air during 2 h. TEM analysis clearly showed the reaction between Si support and LaLuO3 thin films and their polycrystalline structure. The spectroscopy investigations indicate the reaction between Si support and LaLuO3 thin films and formation of silicates. The CeO2 thin buffer layers on Si support limited the reaction between support and thin films. No reactions were observed between the surface Al2O3 and MgO and thin films. (C) 2016 Elsevier Ltd. All rights reserved.