Multilevel Operation in Oxide Based Resistive RAM with SET voltage modulation

In this paper multilevel storage characteristic in Oxide-based Resistive RAM (OxRRAM) is demonstrated by modulating the amplitude of the cell programming voltages. Four resistance levels are clearly obtained. Impact of variability on a multilevel 1T-1R OxRRAM circuit is analyzed quantitatively at a circuit level to guarantee the robustness of the technology.

Domaines

Micro et nanotechnologies/Microélectronique

IM2NP Bibliométrie : Connectez-vous pour contacter le contributeur

https://hal.science/hal-01434981

Soumis le : vendredi 13 janvier 2017-15:03:36

Dernière modification le : lundi 10 juin 2024-16:58:03

Dates et versions

hal-01434981 , version 1 (13-01-2017)

Identifiants

HAL Id : hal-01434981 , version 1
DOI : 10.1109/DTIS.2016.7483892

Citer

Hassen Aziza, H. Ayari, S. Onkaraiah, Mathieu Moreau, Jean-Michel Portal, et al.. Multilevel Operation in Oxide Based Resistive RAM with SET voltage modulation. 2016 11TH IEEE INTERNATIONAL CONFERENCE ON DESIGN & TECHNOLOGY OF INTEGRATED SYSTEMS IN NANOSCALE ERA (DTIS), Apr 2016, Istanbul, Turkey. pp.1-5, ⟨10.1109/DTIS.2016.7483892⟩. ⟨hal-01434981⟩

Exporter

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

UNIV-TLN CNRS UNIV-AMU IM2NP

80 Consultations

0 Téléchargements